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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -5 -9 30 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 70 30 160 30 MIN -50 -60 -6 TYP.
2SB824
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT
MAX
UNIT V V V
-0.4 -0.1 -0.1 280
V mA mA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A; IB1=- IB2=-0.2A 0.1 0.7 0.2 |I |I |I s s s
hFE-1 classifications Q 70-140 R 100-200 S 140-280
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB824
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
4


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